Eur. Phys. J. Appl. Phys.
Volume 49, Number 3, March 2010
|Number of page(s)||7|
|Section||Semiconductors and Devices|
|Published online||16 February 2010|
Structure and diffusion in simulated liquid GaAs
Department of Applied Physics, Institute of Technology,
National University of Hochiminh City, 268 Ly Thuong Kiet Str., Distr. 10, Hochiminh City, Vietnam
Corresponding author: email@example.com
Accepted: 20 November 2009
Published online: 16 February 2010
Structure and diffusion of Ga and As ions in simulated liquid GaAs have been studied in a model containing 3000 ions under periodic boundary conditions via molecular dynamics simulation (MD). The microstructure of systems has been analyzed through partial radial distribution functions (PRDFs), coordination number distributions, bond-angle distributions and interatomic distances. We found that calculated data agree well with the experimental ones. Temperature dependence of these distributions was obtained. Caculations show that liquid GaAs model with a real density at 5.3176 g cm-3 has a distorted tetrahedral network structure with the mean coordination number ZAs-Ga ≈ 4. Diffusion constant D in system has been calculated over temperatures ranged from 5000 K down to 1500 K. Calculations show that the temperature dependence of the diffusion constant D shows an Arrhenius law at relatively low temperatures above the melting point and it shows a power law, D ∼ (T - Tc)γ, at higher temperatures.
© EDP Sciences, 2010
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