Eur. Phys. J. Appl. Phys.
Volume 49, Number 1, January 2010
|Number of page(s)||4|
|Section||Spintronics, Magnetism and Superconductivity|
|Published online||26 November 2009|
Fabrication of point contacts by FIB patterning
Department of Physics, The University of Texas at Austin, Austin, TX, 78712, USA
2 Center for Nano- and Molecular Science and Technology, The University of Texas at Austin, Austin, TX, 78712, USA
3 Texas Materials Institute, The University of Texas at Austin, Austin, TX, 78712, USA
Corresponding author: firstname.lastname@example.org
Accepted: 13 October 2009
Published online: 26 November 2009
We describe a new technique for the fabrication of point contacts using a focused ion beam (FIB) patterning. After sample coverage with a thin insulating layer (SiO), an FIB is used to mill a 100-nm-diameter hole through the insulator. Electrical contact to the sample is then made in-situ by filling the hole with a metal (Pt) using the ion beam assisted chemical vapor deposition capability of our FIB system. We have demonstrated the use of two such contacts (as an emitter and collector) in a transverse electron focusing (TEF) experiment. The contacts were made to a single crystal of bismuth, ballistic electrons were injected into the crystal through the emitter contact and then focused onto the collector by a magnetic field. We see the expected voltage peaks at the collector as a function of the applied magnetic field. Temperature dependent TEF measurements provided direct information about relaxation time of conduction electrons.
PACS: 85.75.-d – Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
© EDP Sciences, 2009
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