Eur. Phys. J. Appl. Phys.
Volume 48, Number 1, October 2009
|Number of page(s)||6|
|Section||Nanomaterials and Nanotechnologies|
|Published online||28 July 2009|
Theoretical study of correlated disorder in superlattices under bias voltage
Département de physique, Laboratoire de valorisation des matériaux, Faculté des sciences, Université Abdelhamid Ibn Badis, BP 227, Mostaganem 27000, Algeria
Corresponding author: firstname.lastname@example.org
Accepted: 15 May 2009
Published online: 28 July 2009
The effect of structural disorder under bias voltage on the transmission properties of a non-interacting electron across multibarrier systems (GaAs/AlxGaAs) is exhaustively studied by a computational model using exact Airy function formalism and the transfer-matrix technique. In ordered systems we study the effect of bias voltage on miniband structure. For disordered structures we investigate the transmission coefficient. Different types of eigenstates are obtained, those having a very low Lyapunov exponent close to the resonant energy and those with high slope in other region. Commuting resonance energy is theoretically demonstrated in this paper, the obtained values are in good agreement with the existing numerical results.
PACS: 73.20.At – Surface states, band structure, electron density of states / 73.21.Ac – Multilayers / 73.21.Cd – Superlattices
© EDP Sciences, 2009
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