Eur. Phys. J. Appl. Phys.
Volume 44, Number 1, October 2008
|Page(s)||71 - 75|
|Section||Plasma, Discharges and Processes|
|Published online||06 August 2008|
Optical and microwave characteristics of ambient temperature deposited zirconium tin titanate high-k films
School of Physics, University of Hyderabad, Hyderabad-5000546, India
Corresponding author: firstname.lastname@example.org
Revised: 17 April 2008
Accepted: 5 May 2008
Published online: 6 August 2008
High-k (Zr,Sn)TiO4 films were grown on glass substrate by DC magnetron sputtering at ambient temperature using elemental, all metallic targets. Films were polycrystalline irrespective of the oxygen partial pressure. The refractive index and optical bandgap of the films were in the range 1.79–1.59 at 600 nm and 3.27–3.39 eV, respectively. Highest value of microwave dielectric constant exhibited was 33 and lowest loss tangent was 0.001 at 10 GHz. Films prepared at 40% oxygen mixing percentage (OMP) gave minimum strain and the same film gave minimum dielectric loss with highest dielectric constant. A correlation between strain values and dielectric loss was observed. The grain sizes as observed from atomic force microscope images are found to be triangular in nature.
PACS: 68.55.-a – Thin film structure and morphology / 74.25.Gz – Optical properties / 52.25.Mq – Dielectric properties
© EDP Sciences, 2008
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