Eur. Phys. J. Appl. Phys.
Volume 43, Number 3, September 2008
Topical Issue ITFPC (Innovations on Thin Films Processing and Characterisation)
|Page(s)||353 - 356|
|Section||Micro and Nanosystems|
|Published online||12 June 2008|
Synthesis of carbon nanbotubes by plasma-enhanced CVD process: gas phase study of synthesis conditions
Groupe Surfaces and Interfaces, IPCMS, UMR 7504 CNRS, 23 rue du Loess, 67034 Strasbourg Cedex, France
2 Department of Experimental Physics, FMFI, Comenius University, Mlynská dolina, F2, 84248 Bratislava, Slovakia
3 LIMHP, Université Paris-13, avenue J.B. Clément, 93430 Villetaneuse, France
Corresponding author: firstname.lastname@example.org
Revised: 1 April 2008
Accepted: 3 April 2008
Published online: 12 June 2008
To support experimental investigations, a model based on ChemkinTM software was used to simulate gas phase and surface chemistry during plasma-enhanced catalytic CVD of carbon nanotubes. According to these calculations, gas phase composition, etching process and growth rates are calculated. The role of several carbon species, hydrocarbon molecules and ions in the growth mechanism of carbon nanotubes is presented in this study. Study of different conditions of gas phase activation sources and pressure is performed.
PACS: 81.15.Gh – Chemical vapor deposition / 61.46.Fg – Nanotubes / 82.20.-w – Chemical kinetics and dynamics
© EDP Sciences, 2008
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