Eur. Phys. J. Appl. Phys.
Volume 43, Number 1, July 2008
|Page(s)||19 - 22|
|Section||Semiconductors and Devices|
|Published online||30 May 2008|
Quantum transport properties of carbon nanotube with topologic defects
College of Physics and Microelectronic Science, Hunan University, Changsha 410082, P.R. China
2 College of Materials Science and Engineering, Hunan University, Changsha 410082, P.R. China
Corresponding author: firstname.lastname@example.org
Accepted: 26 March 2008
Published online: 30 May 2008
Using the density-functional theory (DFT) combining non-equilibrium Green's function (NEGF) technique, we have studied the electronic transport properties of (7,0)-(8,0), (8,0)-(9,0) and (8,0)-(10,0) single-walled carbon nanotube heterojunctions which contain a pentagon-heptagon (5/7) pair of defect, a pentagon-heptagon (5/7) pair of defect and a pentagon-hexagon-heptagon (5/6/7) topological defect, respectively. Our calculations indicate that the 5/6/7 defect has greater effect on the electronic transport properties than that of the isolated 5/7 defect because there exist three weakly localized states in (8,0)-(10,0) heterojunction while two in (7,0)-(8,0) heterojunction. Furthermore, there appears to be negative differential resistance (NDR) in the semiconductor-metal (8,0)-(9,0) heterojunction in small bias region due to the suppression of conduction channel.
PACS: 72.80.Rj – Fullerenes and related materials / 73.61.Wp – Fullerenes and related materials / 73.63.Rt – Nanoscale contacts / 73.22.-f – Electronic structure of nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals
© EDP Sciences, 2008
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