Eur. Phys. J. Appl. Phys.
Volume 42, Number 1, April 2008
16th International Colloquium on Plasma Processes (CIP 2007)
|Page(s)||3 - 8|
|Section||Microelectronics and Optoelectronics|
|Published online||28 March 2008|
Influence of ion bombardment on structural and electrical properties of SiO2 thin films deposited from O2/HMDSO inductively coupled plasmas under continuous wave and pulsed modes
Laboratoire des Matériaux Inorganiques, UMR 6002
CNRS-Université Blaise Pascal, 24 avenue des Landais, 63177 Aubière
2 Institut des matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes, France
3 GM-IETR, Université Rennes I, Campus de Beaulieu, 35042 Rennes Cedex, France
Corresponding author: email@example.com
Revised: 21 December 2007
Accepted: 15 January 2008
Published online: 28 March 2008
Low pressure Plasma Enhanced Chemical Vapour Deposition is commonly used to deposit insulators on temperature sensitive substrates. In these processes, the ion bombardment experienced by films during its growth is known to have benefits but also some disadvantages on material properties. In the present paper, we investigate the influence of this bombardment on the structure and the electrical properties of SiO2-like film deposited from oxygen/hexamethyldisiloxane radiofrequency plasma in continuous and pulsed modes. First, we studied the ion kinetics thanks to time-resolved measurements by Langmuir probe. After, we showed the ion bombardment in such plasma controls the OH bond content in deposited films. Finally, we highlight the impressive reduction of fixed charge and interface state densities in films obtained in pulsed mode due to a lower ion bombardment.
PACS: 52.30.-q – Plasma dynamics and flow / 73.40.Qv – Metal-insulator-semiconductor structures
© EDP Sciences, 2008
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