| Issue |
Eur. Phys. J. Appl. Phys.
Volume 41, Number 2, February 2008
|
|
|---|---|---|
| Page(s) | 91 - 95 | |
| Section | Semiconductors and Related Materials | |
| DOI | https://doi.org/10.1051/epjap:2008011 | |
| Published online | 06 February 2008 | |
https://doi.org/10.1051/epjap:2008011
Thermally induced changes in optical and electrical properties of SnSb2S4 thin films
Laboratoire de Photovoltaïque et Matériaux Semiconducteurs - ENIT BP
37, Le belvédère 1002-Tunis, Tunisia
Corresponding author: mounir.kanzari@ipeit.rnu.tn
Received:
7
July
2007
Revised:
19
September
2007
Accepted:
8
November
2007
Published online:
6
February
2008
Sulfosalt SnSb2S4 films for optical and electrical applications have been prepared on glass substrates by thermal evaporation and subsequently thermally annealed in vacuum at temperatures from 100 to 200 °C. The optical and structural properties of the films were studied as a function of the annealing temperature. The SnSb2S4 films exhibit a polycrystalline structure and undergo abrupt changes in electrical and optical properties at a transition temperature of 140 °C. After annealing below the transition temperature, the films are highly resistive with a dominant amorphous component, but when annealed above this temperature, the samples exhibit p+-type semiconductor behaviour with a dominant crystalline component
PACS: 68.55.-a – Thin film structure and morphology / 78.20.Ci – Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) / 81.15.Ef – Vacuum deposition
© EDP Sciences, 2008
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