Eur. Phys. J. Appl. Phys.
Volume 41, Number 2, February 2008
|Page(s)||107 - 110|
|Section||Semiconductors and Related Materials|
|Published online||06 February 2008|
Amorphous to crystalline induced CoSi2 phase formation in Co-implanted Si
Materials Science Division, Indira Gandhi Centre for Atomic Research,
Kalpakkam 603 102, T.N, India
Corresponding author: firstname.lastname@example.org
Accepted: 29 November 2007
Published online: 6 February 2008
Formation of CoSi2 in Co implanted Si sample has been studied using glancing incidence X-ray diffraction and depth resolved positron annihilation techniques. The implanted sample exhibits near-surface amorphization in the temperature range between 300 K and 670 K. It is found that recrystallization of Si occurs at 870 K which inturn, triggers the formation of the CoSi2 phase at lower temperatures as compared to that obtained in thin film systems. The results are discussed in the light of enhanced intermixing brought by defect migration, associated with recrystallization.
PACS: 81.05.Je – Ceramics and refractories / 78.70.Bj – Positron annihilation / 61.72.Ji – Point defects / 61.10.Nz – X-ray diffraction
© EDP Sciences, 2008
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