Eur. Phys. J. Appl. Phys.
Volume 41, Number 1, January 2008
|Page(s)||41 - 48|
|Section||Laser and Optics|
|Published online||05 February 2008|
The effect of temperature of operation on the turn-on time delay of semiconductor lasers: full analytical and exact expression form
Department of Electrical Engineering, College of Engineering, University of Basrah, Basrah, Iraq
Corresponding author: firstname.lastname@example.org
Revised: 4 October 2007
Accepted: 26 October 2007
Published online: 5 February 2008
In this paper, the effect of temperature of operation on the turn-on time delay, td, of semiconductor laser has been re-studied theoretically. We derived a full analytical and exact expression to determine td in terms of nonradiative, radiative, Auger recombination coefficients, cavity dimensions, threshold carrier density (and in turn threshold current density), injected current and temperature of operation. The temperature dependence (TD) of td was calculated through the TD of threshold carrier density. The TD of threshold carrier density was calculated according to the TD of cavity parameters and not by the well-known exponential Pankove relation via the use of characteristics temperature and current. A complete agreement between the values of td calculated by our proposed model and the numerical method, was shown through the simulation results.
PACS: 42.55.Px – Semiconductor lasers; laser diodes
© EDP Sciences, 2008
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