| Issue |
Eur. Phys. J. Appl. Phys.
Volume 38, Number 3, June 2007
|
|
|---|---|---|
| Page(s) | 231 - 238 | |
| Section | Surfaces, Interfaces and Films | |
| DOI | https://doi.org/10.1051/epjap:2007082 | |
| Published online | 30 May 2007 | |
https://doi.org/10.1051/epjap:2007082
Tilt growth of the epilayer with large lattice mismatch to the substrate
Department of Physics, Wenzhou University, Wenzhou 325027, P.R. China
Corresponding author: liwan_china@yahoo.com.cn
Received:
12
December
2006
Accepted:
3
April
2007
Published online:
30
May
2007
Tilt growth is usually observed for the thin film growth on a substrate.
Such tilt growth is considered as a consequence of the relaxation of the
misfit strain between the epilayer and the substrate. In this paper, we
propose a theoretical method to obtain the tilt angle of the epilayer,
especially suitable for the heterostructure with large misfit strain which
can be more than 10%. As an application of our method, we focus on two
growth cases. One case is the growth of MnAs epilayer on GaAs (113) substrate
with the lattice mismatch between the MnAs epilayer and the GaAs (113)
substrate as high as 80%. And the other case is the growth of GaN
epilayers on GaAs 
substrates. Results calculated
from our method for the two cases agree well with the experimental
observations. This method is general, and can be applied to other material
systems with large lattice mismatch.
PACS: 68.55.Jk – Structure and morphology; thickness; crystalline orientation and texture / 68.60.-p – Physical properties of thin films, nonelectronic
© EDP Sciences, 2007
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