Eur. Phys. J. Appl. Phys.
Volume 37, Number 3, March 2007
|Page(s)||241 - 245|
|Section||Semiconductors and Related Materials|
|Published online||14 February 2007|
Optical characterisation of chemically deposited Pb(1−x) CdxS films and a Pb1−xCdxS(n)/Si(p) heterojunction
Laboratory of Advanced Electronics, LEA, Department of
Electronics, University of Batna, 05000 Batna, Algeria
2 Laboratory: Chimie et Chimie de l'Environnement, Department of Chemistry, University of Batna, 05000 Batna, Algeria
3 Laboratory: Céramiques de Constantine (CC), Department of physics, University of Constantine, 25000 Constantine, Algeria
Corresponding author: email@example.com
Revised: 29 September 2006
Accepted: 27 November 2006
Published online: 14 February 2007
The optical study of transmission T(λ) and reflection R(λ) spectra has enabled us to determine compounds that possess gaps close to 1.5 eV. The conditions for preparation of a ternary compound whose gap is 1.48 eV have been used to create a Pb1−xCdxS-n/Si-p heterojunction. The heterojunction thus obtained presented a low yield (0.5%), as determined from the study of the J–V characteristic. In order to improve its efficiency, we have studied the effect of thermal treatment on the prepared heterojunction. X-ray diffraction has been used to determine the variation in the crystalline parameter and the ratio of cadmium in the Pb1−xCdxS compound, and the dependence of its gap on the cadmium concentration. We have also used the C–V technique to determine the average concentration of impurities in the Pb1−xCdxS compound.
PACS: 78.40.Fy – Semiconductors / 73.50.Pz – Photoconduction and photovoltaic effects / 78.66.Li – Other semiconductors
© EDP Sciences, 2007
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