Eur. Phys. J. Appl. Phys.
Volume 36, Number 3, December 2006
|Page(s)||215 - 218|
|Section||Semiconductors and Related Materials|
|Published online||06 December 2006|
Study of traps in polydiacetylene based devices using TSC technique *
Université de Nantes, Institut des Matériaux Jean Rouxel, 2
rue de la Houssinière, 44322 Nantes Cedex 3, France
2 Department of Applied Chemistry, National Chiao Tung University, Hsinchu 300, Taiwan
Corresponding author: email@example.com
Accepted: 6 October 2006
Published online: 6 December 2006
Trap parameters in poly(1-(3,4-difluorophenyl)-2-(4-pentylcyclohexylphenyl)acetylene) (PDPA-2F) based devices have been investigated by using the thermally stimulated current (TSC) technique. The device structure is ITO-PEDOT-(PDPA-2F)-M, where M stands for the cathode metal (Al, Ca/Al, and Au). The results reveal at least three TSC peaks in devices denoted as peaks A, B and C. Comparing trap parameters in ITO-PEDOT-(PDPA-2F)-Au hole-only device and ITO-PEDOT-(PDPA-2F)-Ca Al (Al) bipolar devices, we assigned A and B trap types to hole-like traps and C type traps to electron-like traps. The trap densities are in the range of 1015−1017 cm−3 and the trap levels are 0.12 eV (A type traps), 0.36 eV (B type traps), and 0.25 eV (C type traps).
PACS: 72.20.Jv – Charge carriers: generation, recombination, lifetime, and trapping / 72.80.Le – Polymers; organic compounds (including organic semiconductors) / 81.05.Lg – Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials / 85.60.Jb – Light-emitting devices
© EDP Sciences, 2006
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