| Issue |
Eur. Phys. J. Appl. Phys.
Volume 32, Number 1, October 2005
|
|
|---|---|---|
| Page(s) | 1 - 5 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap:2005066 | |
| Published online | 25 October 2005 | |
https://doi.org/10.1051/epjap:2005066
Photoelectric studies of gallium monosulfide single crystals
1
Chemical Engineering Department, Clarkson University, Postdeam, NY, 13699, USA
2
Physics Department, State University of New York (SUNY), Potsdam, NY, USA
Corresponding authors: Gamal@clarkson.edu gagamal99@yahoo.com
Received:
3
December
2002
Revised:
24
June
2004
Accepted:
18
March
2005
Published online:
25
October
2005
Photoconductivity studies were carried out on GaS single crystals prepared from melt by directional solidification. We studied the effect of light intensity, applied voltage on both the photoconductivity and the lifetime of carriers. The V-I characteristics and the absorption spectra were checked for different sample thickness. The present investigation was extended to study the spectral distribution of the photocurrent for GaS. It was found that the photocurrent curves are practically independent on the bias voltage. The energy gap for GaS was found to be 2.5 eV.
PACS: 72.40.+w – Photoconduction and photovoltaic effects / 71.20.Nr – Semiconductor compounds / 71.20.Gj – Other metals and alloys
© EDP Sciences, 2005
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