Eur. Phys. J. Appl. Phys.
Volume 28, Number 2, November 2004
|Page(s)||159 - 163|
|Section||Surfaces, Interfaces and Films|
|Published online||25 August 2004|
Titanium carbide film deposition on silicon wafers by pulsed KrF laser ablation of titanium in low-pressure CH4 and C2H2 atmospheres
INFM and Università di Lecce, Dipartimento di Fisica, 73100 Lecce, Italy
2 INFM and Università di Ancona, Dipartimento di Fisica e Ingegneria dei Materiali e del Territorio, 60131 Ancona, Italy
Corresponding author: email@example.com
Accepted: 6 May 2004
Published online: 25 August 2004
We report on the deposition of thin titanium carbide films on 60 mm and 100 mm Si wafers by KrF laser ablation of titanium targets in low-pressure (0.1 Pa) CH4 and C2H2 atmospheres, and on their characterization. The targets were titanium foils (purity 99.6%). Si (111) wafers, 60 and 100 mm in diameter, were used as substrates. Film characteristics (thickness, composition and crystalline structure) were studied as a function of the carbon-containing gas (C2H2 or CH4), laser fluence (4 or 6 J/cm2), substrate temperature (20 or 250 °C) and target-to-substrate distance (70–120 mm). Continuous, well adhesive polycrystalline TiC films were deposited even without any heating of the substrate. Films deposited in C2H2 ambient atmosphere are better crystallized and less prone to surface oxidation with respect to films deposited in CH4 atmosphere, in otherwise identical conditions.
PACS: 79.20.Ds – Laser-beam impact phenomena / 81.15.Fg – Laser deposition / 81.05.Je – Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
© EDP Sciences, 2004
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