| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 427 - 430 | |
| Section | Multi-techniques investigations | |
| DOI | https://doi.org/10.1051/epjap:2004142 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004142
Some structural aspects of PbxCd1−xTe bulk material
1
Grupo de Semiconductores Compuestos, Facultad de Química,
Universidad de la República, Montevideo 11800, Uruguay
2
Departamento de Física de Materiales, Universidad Autónoma
de Madrid, Madrid 28049, Spain
Corresponding author: esaucedo@fq.edu.uy
Received:
4
July
2003
Accepted:
28
January
2004
Published online: 15 July 2004
The ternary alloys PbxCd1−xTe were prepared by the vertical Bridgman method and studied from a morphological viewpoint. The evolution of the different defects with the Pb concentration was described. For x = 0.20, strong segregation was found. A supercrystal structure, formed by alternated layers of CdTe and PbTe was encountered in the PbTe rich phase. We propose some hypothesis about the mechanism for their formation. An interpretation of the optical behavior in the 0.2–0.6 eV infrared region will be also presented.
PACS: 81.05.Dz – II-VI semiconductors / 81.10.Fq – Growth from melts; zone melting and refining / 78.30.Fs – III-V and II-VI semiconductors
© EDP Sciences, 2004
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