High density plasma enhanced chemical vapor deposition of optical thin films

Laboratoire de Physique des Interfaces et des Couches Minces, UMR 7647, CNRS, École Polytechnique, 91128 Palaiseau, France

Corresponding author: daineka@poly.polytechnique.fr

Received: 22 May 2003
Revised: 25 November 2003
Accepted: 18 December 2003
Published online: 4 March 2004

Abstract

Deposition of pure and Ge-doped silica as well as silicon oxynitride films has been studied in a recently developed matrix distributed electron cyclotron resonance (MDECR) reactor. Process parameters were optimized in order to obtain optical quality thin films at low substrate temperatures and high deposition rates without post-deposition treatment. The choice of injection system is shown to be of crucial importance for the deposition of high quality materials in low pressure PECVD. It has been found that injecting silane near the surface allows to obtain films with a low OH absorption independently of silane flow i.e. growth rate in a certain range of process parameters. On the contrary, in the case of uniform distribution of silane in the reactor volume the hydrogen content increases with silane flow, which affects the quality of films deposited at higher rates. With the optimized injection system, stress-free silica films with a low absorption have been deposited at the rates up to 70 nm/min at temperatures lower than 150 °C. Non-absorbing oxynitride films with a controllable refractive index ranging from 1.46 to 1.86 have been obtained from SiH₄/O₂/N₂ mixtures. Ge-doped silica films with a Ge content of up to 4% has been deposited using a mixture GeH₄ in H₂ as a dopant. The properties of deposited films have been studied as a function of process parameters. The results show that the MDECR concept, that permits, in principle, unlimited scaling of substrate size, can be technology of choice for the deposition of optical thin films and functional coatings.