| Issue |
Eur. Phys. J. AP
Volume 21, Number 3, March 2003
|
|
|---|---|---|
| Page(s) | 163 - 170 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap:2002123 | |
| Published online | 19 December 2002 | |
https://doi.org/10.1051/epjap:2002123
cw and pulsed EPR study of lithium irradiated n-type 21R SiC
1
Institute of Material Science, NCSR ‘Demokritos’ 15310, Aghia
Paraskevi, Athens, Greece
2
Laboratory for Material Analysis, Institute of Nuclear Physics,
NCSR ‘Demokritos’ 15310, Aghia Paraskevi, Athens, Greece
Corresponding author: mitrikas@esr.phys.chem.ethz.ch
Received:
17
May
2002
Accepted:
8
November
2002
Published online:
19
December
2002
The impact of light and medium mass ions in crystals in the MeV range is of particular interest in high energy implantations. In the present work, extensive continuous wave (cw) and pulsed electron paramagnetic resonance (EPR) studies of a 21R SiC Lely platelet, after irradiation with 8 MeV 7Li2+ ions in the random direction, up to a maximum dose of approximately 1 × 1016 particles/cm2 are presented. The existence of new types of defects induced in the end-of-range region of impinging ions is discussed and analyzed. Due to the complexity of the induced structure, the technique of progressive annealing was utilized, revealing interesting features in the experimental spectra. The results are compared to known literature and an attempt is made to explain the occurring similarities. Furthermore, a new paramagnetic defect was isolated and analyzed, persisting up to 1100 °C during the annealing procedure.
PACS: 61.80.-x – Physical radiation effects, radiation damage / 61.72.Hh – Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.) / 61.80.Jh – Ion radiation effects / 61.72.Ji – Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
© EDP Sciences, 2003
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