Study of the interaction between heavy ions and integrated circuits using a pulsed laser beam^*

IXL, ENSEIRB-Université Bordeaux 1, 33405 Talence, France

Corresponding author: lewis@ixl.u-bordeaux.fr

Received: 20 November 2001
Revised: 16 July 2002
Accepted: 25 July 2002
Published online: 25 October 2002

Abstract

A new pulsed laser beam equipment dedicated to the characterization of integrated circuit is presented. Using ultra-short laser pulses is a convenient way to simulate experimentally the spatial environment of integrated circuits when interactions with heavy ions occur. This experimental set-up can be considered as a complementary tool for particle accelerators to evaluate the hardness assurance of integrated circuits for space applications. These particles generate temporally electrical disturbance called Single Event Effect (SEE). The theoretical approach of an equivalence between heavy ions and a laser pulses is discussed. The experimental set-up and some relevant operational methodologies are presented. Experimental results demonstrate that the induced electrical responses due to an heavy ion or a laser pulse are quite similar. Some sensitivity mappings of integrated circuits provided by this test bench illustrate the capabilities and the limitations of this laser-based technique. Contrary to the particle accelerators, it provides useful information concerning the spatial and temporal dependences of SEE mechanisms.