Eur. Phys. J. AP
Volume 16, Number 1, October 2001
|Page(s)||53 - 57|
|Section||Magnetism, Superconductivity and Related Devices|
|Published online||15 October 2001|
Ageing phenomena and determination of the optical self absorption coefficient in PN junction
Département de Physique, Institut Préparatoire aux Études d'Ingénieurs de
2 Laboratoire de Physique des Matériaux, Faculté des Sciences de Monastir, Tunisia
3 Laboratoire de Microscopie Électronique, Université Montpellier 2, France
Corresponding author: Samir.Guermazi@ipeis.rnu.tn
Revised: 22 May 2001
Accepted: 5 June 2001
Published online: 15 October 2001
We have developed a model for the calculation of the induced current due to an electron beam with an extended generation profile. The analytical expression of the electron beam induced current (EBIC) is obtained by solving the steady-state continuity equation using the Green function method. In the case of a sulphur doped (Ga0.7Al0.3As:N+/Ga0.7Al0.3As:P) sample prepared by metalorganic vapour phase epitaxy (MOVPE) method, the experimental current profile, measured by SEM enabled us to calculate the diffusion length of the minority carriers (Lp = 1 μm in the N region and Ln = 1.80 μm in the P region of the ternary sample). Far from the depletion layer, the experimental current profile measured provided us the optical self absorption coefficient of this sample: ap = 1.483 μm−1 in the N region and an = 0.167 μm−1 in the P region. According to our EBIC model, the width of the depletion layer of this sample is about 0.8 μm, while at elaboration of the sample, 10 years ago, the width of the depletion layer deduced from the characteristic curve I(V) was about 300−400 Å. This widening of the depletion layer is due to the ageing of the diode.
PACS: 72.20.Jv – Charge carriers: generation, recombination, lifetime, and trapping
© EDP Sciences, 2001
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