| Issue |
Eur. Phys. J. AP
Volume 12, Number 2, November 2000
|
|
|---|---|---|
| Page(s) | 79 - 83 | |
| DOI | https://doi.org/10.1051/epjap:2000173 | |
| Published online | 15 November 2000 | |
https://doi.org/10.1051/epjap:2000173
Interstitial-fluoride and substitutional-oxygen charge compensations of Er3+ doped in CaF2 crystal
1
Groupe de Physique Théorique, Département de Physique, Faculté des
Sciences de Sfax, 3018 Sfax, Tunisia
2
LEMME, Université de Bordeaux 1, 351 cours de la Libération, 33405 Talence Cedex, France
Corresponding author: abdallah.chehaidar@fss.rnu.tn
Received:
29
February
2000
Revised:
21
July
2000
Accepted:
22
August
2000
Published online: 15 November 2000
A detailed crystal-field analysis, based on the Racah' theory, was carried out for the
so-called A, B and G1 isolated charge-compensation centers of Er3+ ion doped in CaF2 crystal.
Three sets of crystal-field parameters were obtained by a least-squares fitting of the optical
data of Er3+ ion diluted in epitaxial Ca1−xErxF2+x thin film. This theoretical analysis confirms
the expected 
site symmetry for the A center and the 
site symmetry for the G1 center.
For the B center, however, the site symmetry is not exactly in contrast to what is
believed.
PACS: 71.70.Ch – Crystal and ligand fields / 78.20.-e – Optical properties of bulk materials and thin films / 78.20.Bh – Theory, models, and numerical simulation
© EDP Sciences, 2000
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