Eur. Phys. J. AP
Volume 11, Number 1, July 2000
|Page(s)||29 - 34|
|Published online||15 July 2000|
Modeling of the spectral response of AlxGa1−xN p-n junction photodetectors
LPMM, Université Hassan II, Faculté des Sciences Aïn Chok Km 8, route El Jadida, BP 5366, Maârif, Casablanca,
2 ETSI Telecommunicacion, Universitad Politecnica de Madrid, 28040 Madrid, Spain
3 CRHEA-CNRS, parc Sophia Antipolis, rue Bernard Gregory, 06560 Valbonne, France
Corresponding author: firstname.lastname@example.org
Revised: 1 January 2000
Accepted: 25 April 2000
Published online: 15 July 2000
We propose to model the spectral response of p-n junction photodetectors based on gallium nitride and related AlGaN alloys. The model is based on the resolution of the differential equations that govern the excess carrier variation in each layer of the photodiode taking into account all the physical parameters, in particular the presence of deep trap levels in the forbidden gap. We notice that the theoretical results are in good agreement with the experiments. We have also analysed the effect of the recombination velocity at the illuminated surface, as well as the impact of the thickness and the doping density of the p-type layer (illuminated zone) on the spectral response magnitude.
PACS: 85.60.Gz – Photodetectors (including infrared and CCD detectors)
© EDP Sciences, 2000
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