Eur. Phys. J. AP
Volume 10, Number 1, April 2000
|Page(s)||9 - 14|
|Published online||15 April 2000|
New buffer layers, large band gap ternary compounds: CuAlTe2
Université d'Oran, Laboratoire de Physique des Matériaux et Composants pour l'Électronique, B.P. 1524,
El Mnaouer Oran, Algeria
2 Université de Cadi Ayyad, Faculté des Sciences et Technique, B.P. 618, Guéliz, Marrakech, Morocco
3 Université de Nantes, Équipe de Physique des Solides pour l'Électronique, Groupe couche minces et Matériaux nouveaux, FSTN, 2 rue de la Houssinière, B.P. 92208, 44322 Nantes Cedex 03, France
Corresponding author: firstname.lastname@example.org
Revised: 4 November 1999
Accepted: 20 January 2000
Published online: 15 April 2000
After deposition, by evaporation under vacuum, of Al/Cu/Te. multilayer structures, annealing at 673 K or more for half an hour, under argon flow, allows CuAlTe2 films crystallised in the chalcopyrite structure to be obtained. The optical and electrical properties are interpreted by introducing the influence of impurity foreign phases present in the films. The optical properties are sensitive to the small Al2O3 domains randomly distributed into the CuAlTe2 polycrystalline matrix. The optical band gap is slightly increased (2.35 eV) by the presence of alumina. The conductivity measurements show that a short circuit effect can be induced by a binary CuTe degenerate phase present at the surface of the films. This effect can be suppressed by KCN etching of the samples that allows the superficial foreign phase to be dissolved.
PACS: 68.55.Jk – Structure and morphology; thickness / 81.15.Ef – Vacuum deposition
© EDP Sciences, 2000
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