Eur. Phys. J. AP
Volume 8, Number 2, September 1999
|Page(s)||153 - 158|
|Published online||15 September 1999|
Effect of Cu on InSe/Si(111) heterojunctions
Laboratoire Surfaces des Matériaux,
Institut de Physique, Université d'Oran Es-Sénia, 31100 Oran, Algeria
2 Laboratoire de Minéralogie Cristallographie (UMR 7590 du CNRS), Université Pierre et Marie Curie, case 115, 4 place Jussieu, 75252 Paris Cedex 05, France
Corresponding author: email@example.com
Revised: 22 July 1999
Accepted: 7 September 1999
Published online: 15 September 1999
The effect of sequential deposition of Cu onto a 300 Å-thick film of layered InSe epitaxially grown onto a Si(111) substrate, has been studied by Auger electron spectroscopy (AES), low energy electron diffraction (LEED) and photoemission yield spectroscopy (PYS). Cu coverages were from a few hundredth of a monolayer (in terms of InSe atomic surface plane: 1 ML = 7.2 × 1014 at/cm2, that is 0.85 Å of Cu-metal) to 300 ML. The effect of annealings up to 370 °C was also studied. It is shown that Cu has first a non uniform bulk interaction with InSe which looks like an insertion which saturates at 1 ML of Cu per In2Se2 single layer. Then it forms islands which fully mask the surface beyond about 150 ML coverage (130 Å of Cu-metal). Upon annealings beyond 300 °C, the Si substrate behaves as a Cu sink.
PACS: 68.35 Fx – Diffusion; interface formation / 73.30.+y – Surface double layers, Schottky barriers, and work functions
© EDP Sciences, 1999
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