Eur. Phys. J. AP
Volume 8, Number 2, September 1999
|Page(s)||171 - 178|
|Published online||15 September 1999|
Ionizing irradiation effect on the current-voltage characteristics of the metal/ultra-thin oxide/semiconductor structures
Laboratoire d'Électronique Appliquée et d'Automatique (LEAA),
Université Mohamed Ier, Faculté des Sciences, département de Physique, Oujda,
2 Laboratoire d'Analyse et d'Architecture des systèmes (LAAS-CNRS), 7 avenue colonel Roche, 31077 Toulouse, France
Corresponding author: firstname.lastname@example.org
Revised: 21 May 1999
Accepted: 27 August 1999
Published online: 15 September 1999
In this paper, we analyse the ionizing irradiation influence on the characteristic current-voltage (V < 0 and V > 0) of the metal/ultra-thin oxide/semiconductor structures where the oxide thickness varies from 40 to 125 Å. The results obtained show that this influence is significant on the current corresponding to the carrier injection by the semiconductor (V > 0). When the thickness of oxide is higher than 100 Å, the radiation creates a positive charge in the oxide and decreases the conduction parameters (K1 and K2). For oxide thicknesses lower than 100 Å, the radiation does not create any charge in the oxide but improves the conduction parameters. This is attributed to the beneficial effect of the radiation on the defects characterizing an ultra-thin oxide layer.
PACS: 73.40.Qv – Metal–insulator–semiconductor structures (including semiconductor-to-insulator)
© EDP Sciences, 1999
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.