| Issue |
Eur. Phys. J. AP
Volume 8, Number 1, October 1999
|
|
|---|---|---|
| Page(s) | 1 - 5 | |
| DOI | https://doi.org/10.1051/epjap:1999222 | |
| Published online | 15 October 1999 | |
https://doi.org/10.1051/epjap:1999222
Ebic contrast in a polycrystalline semiconductor: Grain size dependence*
1
Université de Annaba, Institut de Physique, B.P. 12, 23000 Annaba, Algeria
2
Université de Paris-Sud, LPS, btiment 510, 91405 Orsay, France
Received:
4
February
1997
Revised:
4
February
1998
Accepted:
17
May
1999
Published online: 15 October 1999
Using the perturbation method (Born approximation), a theoretical model has been developed to account for the EBIC intensities and contrasts likely to occur in an n-type polycrystalline semiconductor, as a function of the grain size. The influence of the minority charge carrier diffusion length and the primary electron beam energy have also been examined, respectively.
PACS: 79.20.-m – Impact phenomena (including electron spectra and sputtering)
© EDP Sciences, 1999
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