Eur. Phys. J. AP
Volume 7, Number 2, August 1999
|Page(s)||103 - 109|
|Published online||15 August 1999|
Studies on Al–Mg solid solutions using electrical resistivity and microhardness measurements
Physics Department, Faculty of Science, Assiut University, Assiut 71516, Egypt
Corresponding author: firstname.lastname@example.org
Revised: 4 January 1999
Revised: 10 March 1999
Accepted: 11 March 1999
Published online: 15 August 1999
Al-C at% Mg alloys (C = 0.82, 1.84, 3.76, 5.74 and 12.18) have been selected for this study. From the electrical resistivity measurements it is concluded that the resistivity increment of Al–Mg alloys (in a solid solution state) is proportional to the atomic fractional constituents (Mg and Al) as cm. In addition, both the temperature coefficient of resistivity, αall and the relaxation time of the free electrons τall in the alloys diminish with increasing the solute Mg concentration. The increase of the scattering power, η, with increasing C is interpreted to be due to the contribution of electron-impurity scattering. The percentage increase due to electron-impurity scattering per one atomic percent Mg has been determined as 12.99%. The Debye temperature θ decreases as the Mg concentration increases. The microhardness results showed that the solid solution hardening obeys the relation ΔHVs = 135.5C0.778 MPa which is comparable to the theory of solid solution hardening for all alloys; ΔHVs ≈ C0.5−0.67 MPa.
PACS: 61.66.Dk – Alloys
© EDP Sciences, 1999
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