Eur. Phys. J. AP
Volume 4, Number 2, November 1998
|Page(s)||149 - 156|
|Published online||15 November 1998|
Stacking faults and phase transformations in silicon nitride
Laboratoire de Métallurgie Physique (UMR 6630 CNRS),
Université de Poitiers, UFR
Sciences, SP2MI, Boulevard 3, Téléport 2, 86960 Futuroscope
Corresponding author: email@example.com
Revised: 29 June 1998
Accepted: 29 June 1998
Published online: 15 November 1998
From observations of extended dislocation nodes in β silicon nitride, possible stacking fault structures in the basal plane of this compound have been investigated. It has been found that stacking fault structure is locally analogous to α silicon nitride. A phase transformation α to β or β to α can also be achieved by cooperative shear of partial dislocations with Burgers vectors.
PACS: 61.72.Ff – Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) / 61.50.Ks – Crystallographic aspects of phase transformations; pressure effects / 81.05.Je – Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
© EDP Sciences, 1998
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