| Issue |
Eur. Phys. J. AP
Volume 4, Number 2, November 1998
|
|
|---|---|---|
| Page(s) | 149 - 156 | |
| DOI | https://doi.org/10.1051/epjap:1998254 | |
| Published online | 15 November 1998 | |
https://doi.org/10.1051/epjap:1998254
Stacking faults and phase transformations in silicon nitride
Laboratoire de Métallurgie Physique (UMR 6630 CNRS),
Université de Poitiers, UFR
Sciences, SP2MI, Boulevard 3, Téléport 2, 86960 Futuroscope
Cedex, France
Corresponding author: xavier.milhet@lmp.univ-poitiers.fr
Received:
22
December
1997
Revised:
29
June
1998
Accepted:
29
June
1998
Published online: 15 November 1998
From observations of extended dislocation nodes in β
silicon nitride, possible stacking fault
structures in the basal plane of this compound have been
investigated. It has been found that
stacking fault structure is locally analogous to
α silicon nitride. A phase transformation α to β
or β to α can also be achieved
by cooperative shear of partial dislocations with
Burgers vectors.
PACS: 61.72.Ff – Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) / 61.50.Ks – Crystallographic aspects of phase transformations; pressure effects / 81.05.Je – Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
© EDP Sciences, 1998
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