Eur. Phys. J. AP
Volume 3, Number 2, August 1998
|Page(s)||149 - 158|
|Published online||15 August 1998|
Structural modifications induced by electronic energy loss in Ni3B irradiated with GeV heavy ions*
Laboratoire de Physique de la Matière Condensée ( ERS-CNRS 5646),
Service National des Champs Magnétiques Pulsés, INSA, Complexe
Scientifique de Rangueil, 31077 Toulouse, France
2 Laboratoire des Solides Irradiés, Commissariat à l'Énergie Atomique, École Polytechnique, 91128 Palaiseau Cedex, France
3 Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (IN2P3-CNRS), Bâtiment 108, 91405 Orsay campus, France
Corresponding author: firstname.lastname@example.org
Revised: 10 April 1998
Accepted: 15 April 1998
Published online: 15 August 1998
Crystalline Ni3B samples have been irradiated with GeV heavy ions (from 16O to 238U) at low temperature in order to study the damage induced in this compound by ion electronic energy loss. Electrical resistance measurements were performed in situ during irradiation and during annealing. Subsequent X-ray diffraction data and transmission electron microscopy observations reveal a change of the radiation damage process as a function of the electronic stopping power (dE/dx)e. At low (dE/dx)e isolated defects are created, while at high (dE/dx)e irradiation generates continuous amorphous tracks. Amorphous inclusions (discontinuous tracks) are most likely formed in the intermediate (dE/dx)e range. The amorphous phase induced by swift heavy ion irradiation, different from that formed by quenching techniques, is unstable at room temperature over a period of a few months.
PACS: 61.43.Dq – Amorphous semiconductors, metals, and alloys / 61.80.Jh – Ion radiation effects
© EDP Sciences, 1998
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