Eur. Phys. J. AP
Volume 1, Number 2, February 1998
|Page(s)||141 - 146|
|Published online||15 February 1998|
On the influence of indium addition on the mechanical properties of gallium arsenide at room temperature
CEMES-CNRS, BP 4347, 29 rue Jeanne Marvig, 31055 Toulouse Cedex 4, France
2 LPMC, Département de Physique, INSA, Complexe Scientifique de Rangueil, 31077 Toulouse Cedex 4, France
Corresponding author: email@example.com
Revised: 3 October 1997
Accepted: 18 November 1997
Published online: 15 February 1998
Indentations have been performed on (001) faces of indium alloyed GaAs crystals in darkness and under infrared illumination. The Vickers hardness was measured and the dislocation microstructure around the indents observed by high voltage transmission electron microscopy. A softening effect of indium is evidenced by comparison with the Vickers hardness obtained in the same conditions on undoped GaAs. No significant influence of indium on the dislocation microstructure resulting from indentation in darkness is noted. Indentation under infrared illumination does not reveal any macroscopic photoplastic effect; however, a modification of dislocation microstructure is observed. Whatever the experimental conditions, dislocations appear to experience strong lattice friction. The softening effect of indium addition and the enhanced dislocation mobilities under infrared illumination are discussed in the framework of dislocation glide governed by the Peierls mechanism.
PACS: 62.20.Fe – Deformation and plasticity (including yield, ductility, and superplasticity) / 61.72.Ff – Direct observation of dislocations and other defects (etch pits, decoloration, electron microscopy, X-ray, topography, etc.) / 61.82.Fk – Semiconductors
© EDP Sciences, 1998
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