| Issue |
Eur. Phys. J. Appl. Phys.
Volume 36, Number 3, December 2006
|
|
|---|---|---|
| Page(s) | 215 - 218 | |
| Section | Semiconductors and Related Materials | |
| DOI | https://doi.org/10.1051/epjap:2006139 | |
| Published online | 06 December 2006 | |
https://doi.org/10.1051/epjap:2006139
Study of traps in polydiacetylene based devices using TSC technique *
1
Université de Nantes, Institut des Matériaux Jean Rouxel, 2
rue de la Houssinière, 44322 Nantes Cedex 3, France
2
Department of Applied Chemistry, National Chiao Tung University,
Hsinchu 300, Taiwan
Corresponding author: cedric.renaud@cnrs-imn.fr
Received:
25
July
2006
Accepted:
6
October
2006
Published online:
6
December
2006
Trap parameters in poly(1-(3,4-difluorophenyl)-2-(4-pentylcyclohexylphenyl)acetylene) (PDPA-2F) based devices have been investigated by using the thermally stimulated current (TSC) technique. The device structure is ITO-PEDOT-(PDPA-2F)-M, where M stands for the cathode metal (Al, Ca/Al, and Au). The results reveal at least three TSC peaks in devices denoted as peaks A, B and C. Comparing trap parameters in ITO-PEDOT-(PDPA-2F)-Au hole-only device and ITO-PEDOT-(PDPA-2F)-Ca Al (Al) bipolar devices, we assigned A and B trap types to hole-like traps and C type traps to electron-like traps. The trap densities are in the range of 1015−1017 cm−3 and the trap levels are 0.12 eV (A type traps), 0.36 eV (B type traps), and 0.25 eV (C type traps).
PACS: 72.20.Jv – Charge carriers: generation, recombination, lifetime, and trapping / 72.80.Le – Polymers; organic compounds (including organic semiconductors) / 81.05.Lg – Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials / 85.60.Jb – Light-emitting devices
© EDP Sciences, 2006
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