| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 185 - 188 | |
| Section | Electrical properties | |
| DOI | https://doi.org/10.1051/epjap:2004150 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004150
Quantitative analysis of low-frequency current oscillation in semi-insulating GaAs
1
Advanced Materials R & D Laboratories, Sumitomo Electric Industries,
1-1-1 Koya-kita,Itami, Hyogo 664-0016, Japan
2
Division of Information and Production Science, Graduate School of Science and Technology,
Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan
3
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki,
Sakyo-ku, Kyoto 606-8585, Japan
Corresponding author: kiyama@sei.co.jp
Received:
18
July
2003
Accepted:
15
December
2003
Published online: 15 July 2004
Low-frequency current oscillation (LFO) in semi-insulating (SI) GaAs has been precisely measured with the guard-ring method using three electrodes, in which the electric field is well defined and controlled, and furthermore the surface leakage current becomes low. It is found from the precise measurements of I-V characteristics, waveforms and frequencies of LFO that the LFO phenomenon is well explained by the electric field-enhanced electron capture model taking into account the ionized EL2 concentration. The temperature dependences of LFO are also quantitatively explained by the model.
PACS: 71.55.Eq – III-V semiconductors / 72.20.Ht – High-field and nonlinear effects
© EDP Sciences, 2004
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