Original Article

Investigation of mechanical stresses in β-Ga₂O₃ films obtained by radio frequency magnetron sputtering on porous-Si/Si substrate

¹ School of Chemistry, University College Dublin, Belfield, Dublin 4, Ireland
² Experimentelle Physik 2, Technische Universitat Dortmund, 44221 Dortmund, Germany
³ Dmytro Motornyi Tavria State Agrotechnological University, 18 B. Khmelnytsky Ave, 72312 Melitopol, Ukraine
⁴ Oles Honchar Dnipro National University, 72 Nauky Ave, 49010 Dnipro, Ukraine
⁵ V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 45 Nauky Ave, 02000 Kyiv, Ukraine

^* e-mail: andy.revenko@gmail.com

Received: 27 March 2025
Accepted: 11 July 2025
Published online: 30 July 2025

Abstract

The wide range of possible applications of gallium oxide as a modern and promising material in the semiconductor industry necessitates further research into low-cost methods for growing thin films from this material, particularly on non-native substrates. One way to mitigate imperfections in Ga₂O₃ films caused by structural and lattice parameter mismatches with the substrate material is the use of substrates with porous surfaces. In this study, β-Ga₂O₃ films of 1 µm thickness were deposited on a porous Si/Si substrate using RF magnetron sputtering. Raman scattering and XRD analyses demonstrate the high quality of the obtained gallium oxide film. The magnitude of the residual mechanical stress was quantitatively evaluated, yielding values of 1.4 GPa and 1.8 GPa based on the analysis of XRD data and Raman spectroscopy, respectively.