| Issue |
Eur. Phys. J. Appl. Phys.
Volume 72, Number 2, November 2015
|
|
|---|---|---|
| Article Number | 20104 | |
| Number of page(s) | 9 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2015150248 | |
| Published online | 03 November 2015 | |
https://doi.org/10.1051/epjap/2015150248
Infrared backwards laser melting of a silicon wafer
Institut für Photovoltaik (ipv), Universität Stuttgart, Pfaffenwaldring 47, 70569
Stuttgart, Germany
a e-mail: patrick.lill@ipv.uni-stuttgart.de
Received:
12
May
2015
Revised:
29
September
2015
Accepted:
5
October
2015
Published online:
3
November
2015
We investigate a method for melting a silicon wafer’s rear side with a pulsed infrared laser (1064 nm) impinging onto the front side. The targeted application for this method is deep laser doping. Our numerical model simulates the evolution of the two-dimensional temperature distribution in the wafer caused by pulsed infrared laser irradiation. The model incorporates the temperature dependent material properties of silicon and the enthalpy-based phase change by means of finite volumes. The simulation yields spacial temperature distributions of the wafer’s cross section at defined time steps. We obtain the laser parameters for a continuous melt depth of 40 µm in a 200 µm thick wafer from the analysis of the simulation results.
© The Author(s) 2015
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