Theoretical study on enhancement of the lateral photovoltaic effect for position sensitive detector with resonant cavity

¹ Key Laboratory of Optoelectronic Technology and System, Ministry of Education, Chongqing University, Chongqing 400044, P.R. China
² School of Computer Science and Information Engineering, Chongqing Technology and Business University, Chongqing 400067, P.R. China

^a e-mail: xifeng7429@ctbu.edu.cn

Received: 8 July 2012
Revised: 25 October 2012
Accepted: 29 October 2012
Published online: 26 November 2012

Abstract

A one-dimensional (1D) position sensitive detector (PSD) with the active layer imbedded in resonant cavity is proposed. The lateral photovoltaic effect (LPE) on the surface of active layer is related to the lifetime of photo-generated carriers-electrons and holes pairs. Theoretically, by improving the transmittance of multiple layered systems, the lifetime of carriers can be lengthened. For a photodetector in near infrared, we design the multiple layered system stacked by alternating layers with MgF₂ and InP. The calculated result of electric field distribution in the proposed PSD is maximized in active layer with appropriate thickness. By this means, our aim is theoretically accomplished to enhance LPE in PSD based on resonant cavity structure.