| Issue |
Eur. Phys. J. Appl. Phys.
Volume 48, Number 1, October 2009
|
|
|---|---|---|
| Article Number | 10605 | |
| Number of page(s) | 6 | |
| Section | Nanomaterials and Nanotechnologies | |
| DOI | https://doi.org/10.1051/epjap/2009135 | |
| Published online | 28 July 2009 | |
https://doi.org/10.1051/epjap/2009135
Theoretical study of correlated disorder in superlattices under bias voltage
Département de physique, Laboratoire de valorisation des matériaux, Faculté des sciences, Université Abdelhamid Ibn Badis, BP 227, Mostaganem 27000, Algeria
Corresponding author: djeltired@yahoo.fr
Received:
6
April
2009
Accepted:
15
May
2009
Published online:
28
July
2009
The effect of structural disorder under bias voltage on the transmission
properties of a non-interacting electron across multibarrier systems
(GaAs/AlxGa
As) is exhaustively studied by a computational model
using exact Airy function formalism and the transfer-matrix technique. In
ordered systems we study the effect of bias voltage on miniband structure.
For disordered structures we investigate the transmission coefficient.
Different types of eigenstates are obtained, those having a very low
Lyapunov exponent close to the resonant energy and those with high slope in
other region. Commuting resonance energy is theoretically demonstrated in
this paper, the obtained values are in good agreement with the existing
numerical results.
PACS: 73.20.At – Surface states, band structure, electron density of states / 73.21.Ac – Multilayers / 73.21.Cd – Superlattices
© EDP Sciences, 2009
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