The European Physical Journal Applied Physics (EPJ AP)

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Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles

Zdenek Remes, Jiri Stuchlik, The-ha Stuchlikova, Jaroslav Kupcik, Vincent Mortet, Andrew Taylor, Petr Ashcheulov and Vladimir Alekseevich Volodin

Published online: 03 March 2020

DOI: https://doi.org/10.1051/epjap/2020190253

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Transmission electron microscope imaging of plasma grown electroformed silicon nitride-based light emitting diode for direct examination of nanocrystallization

Tamila Anutgan, Mustafa Anutgan and İsmail Atilgan

Published online: 19 February 2020

DOI: https://doi.org/10.1051/epjap/2020190298

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Investigation on the luminescent stability in amorphous silicon oxynitride systems

Pengzhan Zhang, Sake Wang, Kunji Chen and Xinglong Wu

Published online: 09 April 2020

DOI: https://doi.org/10.1051/epjap/2020190258

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SEM, EDX spectroscopy and real-time optical microscopy of electroformed silicon nitride-based light emitting memory device

Mustafa Anutgan, Tamila Anutgan and Ismail Atilgan

Published online: 07 April 2020

DOI: https://doi.org/10.1051/epjap/2020190300

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Photoconductivity kinetics of indium sulfofluoride thin films

Yuri Vygranenko, Miguel Fernandes, Manuela Vieira, Guilherme Lavareda, Carlos Nunes de Carvalho, Pedro Brogueira and Ana Amaral

Published online: 01 April 2020

DOI: https://doi.org/10.1051/epjap/2020190265

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Defect absorption in selenium films by photothermal deflection spectroscopy

Tamihiro Gotoh

Published online: 27 March 2020

DOI: https://doi.org/10.1051/epjap/2020190247

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Study of nanocrystalline silicon-germanium for the development of thin film transistors

Arturo Torres, Mario Moreno, Pedro Rosales, Miguel Dominguez, Alfonso Torres, Alfredo Morales, Adrian Itzmoyotl and Javier de la Hidalga

Published online: 27 March 2020

DOI: https://doi.org/10.1051/epjap/2020190264

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Si surface passivation by using triode-type plasma-enhanced chemical vapor deposition with thermally energized film-precursors

Chisato Niikura, Yuta Shiratori and Shinsuke Miyajima

Published online: 27 March 2020

DOI: https://doi.org/10.1051/epjap/2020190299

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Synthesis and surface modification of light emitting silicon nanoparticles using non-thermal plasma techniques

Martin Müller, Pavel Galář, Jiří Stuchlík, Jan Kočka, Jonáš Kupka and Kateřina Kůsová

Published online: 15 April 2020

DOI: https://doi.org/10.1051/epjap/2020190263

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Effect of heat treatments on the electronic properties of indium sulfide films

Tamihiro Gotoh

Published online: 09 April 2020

DOI: https://doi.org/10.1051/epjap/2020190240

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Reduction of residual stress in polymorphous silicon germanium films and their evaluation in microbolometers

Ricardo Jimenez, Mario Moreno, Alfonso Torres, Roberto Ambrosio, Aurelio Heredia and Arturo Ponce

Published online: 23 April 2020

DOI: https://doi.org/10.1051/epjap/2020190245

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Light-induced defect creation processes and light-induced defects in hydrogenated amorphous silicon

Kazuo Morigaki

Published online: 26 June 2020

DOI: https://doi.org/10.1051/epjap/2020190257

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Computer simulation study about the dependence of amorphous silicon photonic waveguides efficiency on the material quality

Alessandro Fantoni, João Costa, Paulo Lourenço and Manuela Vieira

Published online: 07 July 2020

DOI: https://doi.org/10.1051/epjap/2020190250

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A study of the effect of morphology on the optical and electrical properties of TiO₂ nanotubes for gas sensing applications

Alba Arenas-Hernandez, Carlos Zúñiga-Islas and Julio César Mendoza-Cervantes

Published online: 07 July 2020

DOI: https://doi.org/10.1051/epjap/2020190267

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Silver photodiffusion into amorphous Ge chalcogenides - Excitation photon energy dependence of the kinetics probed by neutron reflectivity

Yoshifumi Sakaguchi, Takayasu Hanashima, Al-Amin Ahmed Simon and Maria Mitkova

Published online: 01 July 2020

DOI: https://doi.org/10.1051/epjap/2020190368

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Hole trapping capability of silicon carbonitride charge trap layers

Kiyoteru Kobayashi and Hiroshi Mino

Published online: 14 July 2020

DOI: https://doi.org/10.1051/epjap/2020190297

Sensitivity of germanium content on growth conditions of silicon-germanium nanoparticles prepared in nonthermal capacitively-coupled plasmas

Md. Seraj Uddin, C. Vijayan and Jatindra Kumar Rath

Published online: 06 August 2020

DOI: https://doi.org/10.1051/epjap/2020190302

The European Physical Journal - Applied Physics

Disordered Semiconductors: Physics and Applications

Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles

Transmission electron microscope imaging of plasma grown electroformed silicon nitride-based light emitting diode for direct examination of nanocrystallization

Investigation on the luminescent stability in amorphous silicon oxynitride systems

SEM, EDX spectroscopy and real-time optical microscopy of electroformed silicon nitride-based light emitting memory device

Photoconductivity kinetics of indium sulfofluoride thin films

Defect absorption in selenium films by photothermal deflection spectroscopy

Study of nanocrystalline silicon-germanium for the development of thin film transistors

Si surface passivation by using triode-type plasma-enhanced chemical vapor deposition with thermally energized film-precursors

Synthesis and surface modification of light emitting silicon nanoparticles using non-thermal plasma techniques

Effect of heat treatments on the electronic properties of indium sulfide films

Reduction of residual stress in polymorphous silicon germanium films and their evaluation in microbolometers

Light-induced defect creation processes and light-induced defects in hydrogenated amorphous silicon

Computer simulation study about the dependence of amorphous silicon photonic waveguides efficiency on the material quality

A study of the effect of morphology on the optical and electrical properties of TiO₂ nanotubes for gas sensing applications

Silver photodiffusion into amorphous Ge chalcogenides - Excitation photon energy dependence of the kinetics probed by neutron reflectivity

Hole trapping capability of silicon carbonitride charge trap layers

Sensitivity of germanium content on growth conditions of silicon-germanium nanoparticles prepared in nonthermal capacitively-coupled plasmas