The European Physical Journal Applied Physics (EPJ AP)

Influence of high-index GaAs substrates on the 2D electron density of δ-doped pHEMT with an additional In_xGa_1-xAs (x > 0.15) thin layer embedded in the channel

L. Bouzaïene, S. Rekaya, L. Sfaxi and H. Maaref

Eur. Phys. J. Appl. Phys., 29 3 (2005) 209-213

Published online: 21 December 2004

DOI: 10.1051/epjap:2004219

L. Bouzaïene

S. Rekaya

L. Sfaxi

H. Maaref

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