The European Physical Journal Applied Physics (EPJ AP)

The conduction band alignment of HfO₂ caused by oxygen vacancies and its effects on the gate leakage current in MOS structures

L. F. Mao, Z. O. Wang, J. Y. Wang and C. Y. Zhu

Eur. Phys. J. Appl. Phys., 40 1 (2007) 59-63

Published online: 31 August 2007

DOI: 10.1051/epjap:2007129

L. F. Mao

Z. O. Wang

J. Y. Wang

C. Y. Zhu

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