The European Physical Journal Applied Physics (EPJ AP)

Grown-in vacancy-type defects in poly- and single crystalline silicon investigated by positron annihilation

S. Dannefaer, V. Avalos and O. Andersen

Eur. Phys. J. Appl. Phys., 37 2 (2007) 213-218

Published online: 24 January 2007

DOI: 10.1051/epjap:2007018

S. Dannefaer

V. Avalos

O. Andersen

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