The European Physical Journal Applied Physics (EPJ AP)

Remote plasma assisted MOCVD growth of GaN on 4H-SiC: growth mode characterization exploiting ellipsometry

M. Losurdo, M. M. Giangregorio, P. Capezzuto, G. Bruno, T.-H. Kim, S. Choi and A. Brown

Eur. Phys. J. Appl. Phys., 31 3 (2005) 159-164

Published online: 14 September 2005

DOI: 10.1051/epjap:2005056

M. Losurdo

M. M. Giangregorio

P. Capezzuto

G. Bruno

T.-H. Kim

S. Choi

A. Brown

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