The European Physical Journal Applied Physics (EPJ AP)

Effects of junction profiles in bottom protection p-well on electrical characteristics of 1.2 kV SiC trench-gate MOSFETs

Ogyun Seok, Hyoung Woo Kim, In Ho Kang, Min-Woo Ha and Wook Bahng

Eur. Phys. J. Appl. Phys., 88 3 (2019) 30103

Published online: 19 February 2020

DOI: 10.1051/epjap/2020190269

Ogyun Seok

Hyoung Woo Kim

In Ho Kang

Min-Woo Ha

Wook Bahng

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