The European Physical Journal Applied Physics (EPJ AP)

Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts

Teng Zhang, Christophe Raynaud and Dominique Planson

Eur. Phys. J. Appl. Phys., 85 1 (2019) 10102

Published online: 22 February 2019

DOI: 10.1051/epjap/2018180282

Teng Zhang

Christophe Raynaud

Dominique Planson

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