Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates
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Eur. Phys. J. Appl. Phys., 55 3 (2011) 30102
Published online: 18 August 2011
DOI: 10.1051/epjap/2011110218