The European Physical Journal Applied Physics (EPJ AP)

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The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors

D.F. Lin, X.L. Wang, H.L. Xiao, C.M. Wang, L.J. Jiang, C. Feng, H. Chen, Q.F. Hou, Q.W. Deng, Y. Bi and H. Kang

Eur. Phys. J. Appl. Phys., 55 3 (2011) 30104

Published online: 18 August 2011

DOI: 10.1051/epjap/2011110209

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The European Physical Journal Applied Physics (EPJ AP)

Editors-in-Chief: Vincent Mauchamp and Philippe Moreau - Editorial board
ISSN: 1286-0042 - eISSN: 1286-0050
Frequency: monthly
Copyright / Published by: EDP Sciences

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