The European Physical Journal Applied Physics (EPJ AP)

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Low temperature characteristics of AlGaN/GaN high electron mobility transistors

D.F. Lin, X.L. Wang, H.L. Xiao, C.M. Wang, L.J. Qiang, C. Feng, H. Chen, Q.F. Hou, Q.W. Deng, Y. Bi and H. Kang

Eur. Phys. J. Appl. Phys., 56 1 (2011) 10101

Published online: 28 September 2011

DOI: 10.1051/epjap/2011110193

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The European Physical Journal Applied Physics (EPJ AP)

Editors-in-Chief: Vincent Mauchamp and Philippe Moreau - Editorial board
ISSN: 1286-0042 - eISSN: 1286-0050
Frequency: monthly
Copyright / Published by: EDP Sciences

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