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The influence of the InGaN back-barrier on the properties of Al_0.3Ga_0.7N/AlN/GaN/InGaN/GaN structure

Y. Bi, X.L. Wang, H.L. Xiao, C.M. Wang, E.C. Peng, D.F. Lin, C. Feng and L.J. Jiang

Eur. Phys. J. Appl. Phys., 55 1 (2011) 10102

Published online: 21 July 2011

DOI: 10.1051/epjap/2011110184

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The European Physical Journal Applied Physics (EPJ AP)

Editors-in-Chief: Vincent Mauchamp and Philippe Moreau - Editorial board
ISSN: 1286-0042 - eISSN: 1286-0050
Frequency: monthly
Copyright / Published by: EDP Sciences

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The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure

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The influence of the InGaN back-barrier on the properties of Al_0.3Ga_0.7N/AlN/GaN/InGaN/GaN structure