The European Physical Journal Applied Physics (EPJ AP)

Temperature mapping of Al_0.85In_0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

M. Gonschorek, D. Simeonov, J.-F. Carlin, E. Feltin, M. A. Py and N. Grandjean

Eur. Phys. J. Appl. Phys., 47 3 (2009) 30301

Published online: 20 May 2009

DOI: 10.1051/epjap/2009091

M. Gonschorek

D. Simeonov

J.-F. Carlin

E. Feltin

M. A. Py

N. Grandjean

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