Pyramidal defects in highly Mg-doped GaN: atomic structure and influence on optoelectronic propertiesM. Leroux, P. Vennéguès, S. Dalmasso, P. de Mierry, P. Lorenzini, B. Damilano, B. Beaumont, P. Gibart and J. MassiesEur. Phys. J. Appl. Phys., 27 1-3 (2004) 259-262DOI: https://doi.org/10.1051/epjap:2004119-2
