Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistorsR. Aubry, C. Dua, J.-C. Jacquet, F. Lemaire, P. Galtier, B. Dessertenne, Y. Cordier, M. -A. DiForte-Poisson and S. L. DelageEur. Phys. J. Appl. Phys., 27 1-3 (2004) 293-296DOI: https://doi.org/10.1051/epjap:2004055
